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PRELIMINARY
PD 9.1091A
IRL2203S
HEXFET(R) Power MOSFET
l
Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
D
VDSS = 30V RDS(on) = 0.007
G
ID = 100A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
D2Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
100 71 400 3.8 130 0.83 20 390 60 13 1.2 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.2 40
Units
C/W
IRL2203S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LS Ciss Coss Crss
Min. 30 --- --- --- 1.0 47 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.035 --- --- --- --- --- --- --- --- --- --- --- 15 210 29 54
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.007 VGS = 10V, ID = 60A 0.01 VGS = 4.5V, ID = 50A 2.5 V VDS = VGS, ID = 250A --- S VDS = 25V, I D = 60A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 I D = 60A 31 nC VDS = 24V 57 VGS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- I D = 60A ns --- RG = 1.8, VGS = 4.5V --- RD = 0.25, See Fig. 10 Between lead, 7.5 nH --- and center of die contact 3500 --- VGS = 0V 1400 --- pF VDS = 25V 690 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- 100 A --- --- 94 280 400 1.3 140 410 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 60A, VGS = 0V TJ = 25C, IF = 60A di/dt = 100A/s
D
S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
VDD = 15V, starting TJ = 25C, L = 220H
RG = 25, IAS = 60A. (See Figure 12)
ISD 60A, di/dt 140A/s, VDD V(BR)DSS ,
TJ 175C
Uses IRL2203N data and test conditions.
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2203S
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rce C u rre n t (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
100
10
10
2 .5V
2.5 V 2 0 s PU L SE W ID TH T J = 2 5C
0.1 1 10
1
A
1 0.1 1
2 0 s PU L SE W ID TH T J = 1 75 C
10
A
100
100
V D S , Drain-to-S ource Voltage (V )
V D S , Drain-to-S ource Voltage (V )
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, T J = 175oC
1000
2.0
T J = 2 5 C
100
R DS (on ) , Drain-to-S ource O n Resistance ( Norm alized)
I D = 100 A
I D , D r ain- to-S ourc e C urre nt (A )
1.5
T J = 1 75 C
1.0
10
0.5
1 2.0 3.0 4.0 5.0
V DS = 1 5 V 2 0 s P U L SE W ID TH
6.0 7.0 8.0 9.0
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10V
A
100 120 140 160 180
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction Tem perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL2203S
8000
C , C a p a c ita n c e (p F )
6000
C is s C os s
V G S , Gate-to-Source Voltage ( V)
V GS C is s C rs s C o ss
= 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d
15
I D = 60A V D S = 24 V V D S = 15 V
12
9
4000
6
C rs s
2000
3
0 1 10 100
A
0 0 30 60
FOR TE ST CIR C UIT SEE FIGU RE 1 3 A
90 120 150
V D S , Drain-to-Source V oltage (V)
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R e v e rse D ra in C u rre n t (A )
O PER ATIO N IN TH IS AR EA L IM ITED BY R DS (o n)
10 s
TJ = 25 C TJ = 17 5C
100
I D , D ra in C u rre n t (A )
100
10 0s
1m s 10
10m s
10 0.5 1.0 1.5 2.0 2.5
VG S = 0 V
3.0
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10 100
A
3.5
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL2203S
VDS
100
RD
L IM ITED BY PAC KA GE
VGS RG
D.U.T.
+
80
I D , D ra in C u rre n t (A m p s)
-VDD
5.0V
60 Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0 25 50 75 100 125 150
A
175
TC , C ase T em perature (C )
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
T her m al R e spon se ( Z th J C )
1 D = 0.50
0.20 0.10 0.1 0.05 0.02 0.01 S INGLE PULS E ( THER MAL R ESP ONS E) 0.01 0.00001 0.0001 0.001 0.01
P
DM
t
1
t2
Notes : 1. D uty fac tor D = t
1
/t
2
2. P ea k TJ = P D M x Z thJ C + T C
A
10
0.1
1
t 1 , R ectan gular P ulse D u ration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2203S
1000
E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
TO P
800
1 5V
B OTTO M
ID 24 A 4 2A 60 A
VD S
L
D R IV E R
RG 20 V
D .U .T IA S tp 0 .0 1
+ - VDD
600
5.0 V
A
400
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS tp
200
0 25
VD D = 1 5V
50 75 100 125 150
A
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2203S
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRL2203S
Package Outline -- D2Pak
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) 1.40 ( .055) M AX. -A2
4.69 (.185) 4.20 (.165)
-B1.32 ( .052) 1.22 ( .048)
10.16 (.400) RE F .
6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 ( .208) 4.78 ( .188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F.
1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 5.08 (.200)
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BA M
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
MINIM UM RE CO MM ENDED F OO TP RINT 11.43 (.450)
NO TE S: 1 DIM ENSIO NS AF T ER S OLDE R DIP. 2 DIM ENSIO NING & TO LERAN CING PER ANS I Y14.5M, 1982. 3 CO NTRO LLING DIME NS IO N : INC H. 4 HE AT SINK & LE AD D IM ENS IONS DO NO T INCLUDE B UR RS .
LEA D AS SIG NMEN TS 1 - GA TE 2 - DRAIN 3 - SO URCE
8.89 ( .350) 17.78 ( .700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
Part Marking
E X AM PL E : T H IS I S A N IR F1 010
E X A M P L E : THIT H ISS S E MB LY5 30 S W IS A A N IR F L OT CO D E E M B LY W ITH A S S 9 B1M L O T C O D E 9B 1 M
A
I NT E RN A TIO N AL IN TE R N A TIO N A L R E C TIF IE R IRF 10 10 R E C T IF IE R LOG O F 53 92460 S LOG O 9B 1 M9 2 4 6 A SS E MB LY 9B 1M LOTS S C OD E Y A EM BL
P AR T NU M BE R
A
P A RT N U MB E R
LOT
CO DE
D A TE D A TEE C O D E C OD (Y YW W ) (Y Y W W ) Y Y = YE A R YY = YE AR W W = W EE K
W W = W E EK
IRL2203S
Tape & Reel -- D2Pak
Dimensions are shown in millimeters (inches)
TR R
1 .60 (.063 ) 1 .50 (.059 ) 4.10 ( .16 1) 3.90 ( .15 3)
1 . 6 0 (. 0 6 3 ) 1 . 5 0 (. 0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F E E D D IR E C T IO N
1 .85 ( .07 3) 1 .65 ( .06 5)
1 1 . 6 0 (. 4 5 7 ) 1 1 . 4 0 (. 4 4 9 )
1 5 . 4 2 (. 6 0 9 ) 1 5 . 2 2 (. 6 0 1 )
2 4 . 3 0 (. 9 5 7 ) 2 3 . 9 0 (. 9 4 1 )
TR L
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T IO N
1 3 . 50 (.5 3 2 ) 1 2 . 80 (.5 0 4 )
2 7 .4 0 (1 . 07 9 ) 2 3 .9 0 (. 9 41 )
4
330.00 (14.173) MAX.
60 .0 0 (2. 3 6 2) M IN .
NOTES : 1. C O M F O R M S T O E IA -4 1 8. 2. C O N T R O L LI N G D I M E N S IO N : M IL L IM E T E R . 3. D IM E N S I O N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
26.40 (1.039) 24.40 (.961)
3 0 . 40 (1 .1 9 7) MAX. 4
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96

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